SI4842BDY-T1-E3 vs SI4126DY-T1-GE3 feature comparison

SI4842BDY-T1-E3 Vishay Intertechnologies

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SI4126DY-T1-GE3 Vishay Intertechnologies

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Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC VISHAY INTERTECHNOLOGY INC
Package Description SOP-8 ROHS COMPLIANT, SOP-8
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay Vishay
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 28 A 26.5 A
Drain-source On Resistance-Max 0.0042 Ω 0.0028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 6.25 W 7.8 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Transistor Application SWITCHING