SI4800
vs
BSO302SN
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
PHILIPS SEMICONDUCTORS
|
INFINEON TECHNOLOGIES AG
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| Drain Current-Max (ID) |
9 A
|
9.8 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Moisture Sensitivity Level |
2
|
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
2.5 W
|
2 W
|
| Surface Mount |
YES
|
YES
|
| Base Number Matches |
2
|
1
|
| Additional Feature |
|
LOGIC LEVEL COMPATIBLE
|
| Avalanche Energy Rating (Eas) |
|
250 mJ
|
| DS Breakdown Voltage-Min |
|
30 V
|
| Drain-source On Resistance-Max |
|
0.013 Ω
|
| JESD-30 Code |
|
R-PDSO-G8
|
| JESD-609 Code |
|
e0
|
| Number of Terminals |
|
8
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Pulsed Drain Current-Max (IDM) |
|
39.2 A
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
TIN LEAD
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
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