SI4532CDY-T1-GE3
vs
FDS6682
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
VISHAY SILICONIX
|
ROCHESTER ELECTRONICS LLC
|
Part Package Code |
SOT
|
SOT
|
Package Description |
HALOGEN FREE AND ROHS COMPLIANT, SOP-8
|
SO-8
|
Pin Count |
8
|
8
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
|
Samacsys Manufacturer |
Vishay
|
|
Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
6 A
|
14 A
|
Drain-source On Resistance-Max |
0.047 Ω
|
0.0075 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
2
|
1
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL AND P-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
COMMERCIAL
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
PURE MATTE TIN
|
MATTE TIN
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
3
|
JESD-609 Code |
|
e3
|
Peak Reflow Temperature (Cel) |
|
260
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare SI4532CDY-T1-GE3 with alternatives
Compare FDS6682 with alternatives