SI4435DYPBF
vs
IRF7303PBF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PDSO-G8
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Infineon
Additional Feature
ULTRA LOW RESISTANCE
LOGIC LEVEL COMPATIBLE
Configuration
SINGLE WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
8 A
4.9 A
Drain-source On Resistance-Max
0.02 Ω
0.05 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
MS-012AA
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
1.4 W
Pulsed Drain Current-Max (IDM)
50 A
20 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
Matte Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Factory Lead Time
4 Weeks
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Compare SI4435DYPBF with alternatives
Compare IRF7303PBF with alternatives