SI4435DY-T1
vs
SI4435DDY-T1-GE3
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Not Recommended
|
| Ihs Manufacturer |
VISHAY SILICONIX
|
VISHAY INTERTECHNOLOGY INC
|
| Package Description |
SMALL OUTLINE, R-PDSO-G8
|
HALOGEN FREE AND ROHS COMPLIANT, SOP-8
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
30 V
|
| Drain Current-Max (ID) |
8 A
|
8.1 A
|
| Drain-source On Resistance-Max |
0.035 Ω
|
0.024 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
8
|
8
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation Ambient-Max |
2.5 W
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN LEAD
|
MATTE TIN
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
| Samacsys Manufacturer |
|
Vishay
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max (Abs) |
|
5 W
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare SI4435DY-T1 with alternatives
Compare SI4435DDY-T1-GE3 with alternatives