SI4435BDY-T1 vs SI4435DYS62Z feature comparison

SI4435BDY-T1 Vishay Intertechnologies

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SI4435DYS62Z Fairchild Semiconductor Corporation

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC FAIRCHILD SEMICONDUCTOR CORP
Package Description , SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 7 A 8.8 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Surface Mount YES YES
Base Number Matches 2 1
Part Package Code SOT
Pin Count 8
DS Breakdown Voltage-Min 30 V
Drain-source On Resistance-Max 0.02 Ω
JESD-30 Code R-PDSO-G8
Number of Terminals 8
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Compare SI4435BDY-T1 with alternatives

Compare SI4435DYS62Z with alternatives