SI4431DY
vs
SI4431BDY-T1-E3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
SILICONIX INC
VISHAY SILICONIX
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
5.8 A
5.7 A
Drain-source On Resistance-Max
0.04 Ω
0.03 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e0
e3
Number of Elements
1
1
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation Ambient-Max
2.5 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Part Package Code
SOT
Package Description
ROHS COMPLIANT, SOP-8
Pin Count
8
Moisture Sensitivity Level
1
Compare SI4431DY with alternatives
Compare SI4431BDY-T1-E3 with alternatives