SI4431BDY-T1-GE3 vs SI5435BDC-T1-E3 feature comparison

SI4431BDY-T1-GE3 Vishay Siliconix

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SI5435BDC-T1-E3 Vishay Siliconix

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer VISHAY SILICONIX VISHAY SILICONIX
Part Package Code SOT
Package Description HALOGEN FREE AND ROHS COMPLIANT, SOP-8 SMALL OUTLINE, R-PDSO-C8
Pin Count 8 8
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay Vishay
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 5.7 A 4.3 A
Drain-source On Resistance-Max 0.03 Ω 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-C8
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL P-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING C BEND
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Power Dissipation-Max (Abs) 2.5 W

Compare SI4431BDY-T1-GE3 with alternatives

Compare SI5435BDC-T1-E3 with alternatives