SI4416DY/T3
vs
FDS6912AS62Z
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NXP SEMICONDUCTORS
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
SOIC
SOT
Package Description
SMALL OUTLINE, R-PDSO-G8
SMALL OUTLINE, R-PDSO-G8
Pin Count
8
8
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
kg CO2e/kg
8.8
Average Weight (mg)
66.775
CO2e (mg)
587.62
Category CO2 Kg
8.8
Configuration
SINGLE WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
0.009 A
6 A
Drain-source On Resistance-Max
0.018 Ω
0.028 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
50 pF
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
Number of Elements
1
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Additional Feature
LOGIC LEVEL COMPATIBLE
Operating Temperature-Max
150 °C
Compare SI4416DY/T3 with alternatives
Compare FDS6912AS62Z with alternatives