SI4412DYF011 vs PHN103T feature comparison

SI4412DYF011 Fairchild Semiconductor Corporation

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PHN103T NXP Semiconductors

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP NXP SEMICONDUCTORS
Part Package Code SOT SOT
Package Description SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
Pin Count 8 8
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 7 A 8.6 A
Drain-source On Resistance-Max 0.028 Ω 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8 R-PDSO-G8
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 5
Rohs Code Yes
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 6.25 W

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