SI4162DY-T1-GE3
vs
BSO065N03MSG
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Obsolete
|
Ihs Manufacturer |
VISHAY SILICONIX
|
INFINEON TECHNOLOGIES AG
|
Part Package Code |
SOIC
|
|
Package Description |
HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
|
SMALL OUTLINE, R-PDSO-G8
|
Pin Count |
8
|
8
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
Vishay
|
|
Avalanche Energy Rating (Eas) |
48 mJ
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
19.3 A
|
11 A
|
Drain-source On Resistance-Max |
0.0079 Ω
|
0.0065 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
95 pF
|
|
JEDEC-95 Code |
MS-012AA
|
|
JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
3
|
Number of Elements |
1
|
1
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
5 W
|
2.5 W
|
Pulsed Drain Current-Max (IDM) |
70 A
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
MATTE TIN
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
55 ns
|
|
Turn-on Time-Max (ton) |
55 ns
|
|
Base Number Matches |
2
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
|
|
|
Compare SI4162DY-T1-GE3 with alternatives
Compare BSO065N03MSG with alternatives