SI3443DV-T1 vs SI3443DV feature comparison

SI3443DV-T1 Vishay Intertechnologies

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SI3443DV Rochester Electronics LLC

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Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC ROCHESTER ELECTRONICS LLC
Reach Compliance Code compliant unknown
ECCN Code EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 3.4 A 4 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 e3
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 2 W
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Base Number Matches 2 1
Pbfree Code Yes
Part Package Code SOT
Package Description SUPERSOT-6
Pin Count 6
DS Breakdown Voltage-Min 20 V
Drain-source On Resistance-Max 0.065 Ω
JESD-30 Code R-PDSO-G6
Moisture Sensitivity Level 1
Number of Terminals 6
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Qualification Status COMMERCIAL
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Compare SI3443DV-T1 with alternatives

Compare SI3443DV with alternatives