SI3441DV
vs
2N5523
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
TEMIC SEMICONDUCTORS
|
NATIONAL SEMICONDUCTOR CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
|
| DS Breakdown Voltage-Min |
20 V
|
|
| Drain Current-Max (ID) |
3.3 A
|
|
| Drain-source On Resistance-Max |
0.135 Ω
|
|
| JESD-30 Code |
R-PDSO-G6
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
6
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
P-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
3
|
8
|
| Rohs Code |
|
No
|
| Package Description |
|
,
|
| FET Technology |
|
JUNCTION
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
0.25 W
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|