SI2312DS-T1
vs
SSM3K345R
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
VISHAY SILICONIX
|
TOSHIBA CORP
|
| Part Package Code |
SOT-23
|
|
| Package Description |
TO-236, 3 PIN
|
,
|
| Pin Count |
3
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Vishay
|
Toshiba
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
20 V
|
|
| Drain Current-Max (ID) |
3.77 A
|
|
| Drain-source On Resistance-Max |
0.033 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JEDEC-95 Code |
TO-236AB
|
|
| JESD-30 Code |
R-PDSO-G3
|
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
3
|
| Date Of Intro |
|
2016-12-09
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare SI2312DS-T1 with alternatives
Compare SSM3K345R with alternatives