SI2307CDS-T1-GE3
vs
SSM3J14T
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
End Of Life
Ihs Manufacturer
VISHAY SILICONIX
TOSHIBA CORP
Part Package Code
SOT-23
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-G3
Pin Count
3
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
30 V
Drain Current-Max (ID)
2.7 A
2.7 A
Drain-source On Resistance-Max
0.088 Ω
0.17 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
51 pF
77 pF
JEDEC-95 Code
TO-236AB
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Pulsed Drain Current-Max (IDM)
12 A
5.4 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
MATTE TIN
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
70 ns
Turn-on Time-Max (ton)
120 ns
Base Number Matches
1
5
Samacsys Manufacturer
Toshiba
Power Dissipation-Max (Abs)
0.7 W
Compare SI2307CDS-T1-GE3 with alternatives
Compare SSM3J14T with alternatives