SI2306BDS-T1-E3
vs
RUE003N02TL
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Not Recommended
|
Obsolete
|
Ihs Manufacturer |
VISHAY INTERTECHNOLOGY INC
|
ROHM CO LTD
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
17 Weeks, 3 Days
|
|
Samacsys Manufacturer |
Vishay
|
ROHM Semiconductor
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Terminal Finish |
MATTE TIN
|
Matte Tin (Sn)
|
Time@Peak Reflow Temperature-Max (s) |
30
|
10
|
Base Number Matches |
2
|
1
|
Pbfree Code |
|
Yes
|
Package Description |
|
SMALL OUTLINE, R-PDSO-G3
|
Pin Count |
|
3
|
Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
|
20 V
|
Drain Current-Max (ID) |
|
0.3 A
|
Drain-source On Resistance-Max |
|
1.4 Ω
|
FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
|
R-PDSO-G3
|
Number of Elements |
|
1
|
Number of Terminals |
|
3
|
Operating Mode |
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
|
150 °C
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
SMALL OUTLINE
|
Polarity/Channel Type |
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
|
0.15 W
|
Surface Mount |
|
YES
|
Terminal Form |
|
GULL WING
|
Terminal Position |
|
DUAL
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
|
|
|
Compare SI2306BDS-T1-E3 with alternatives
Compare RUE003N02TL with alternatives