SI2306BDS-T1-E3 vs RUE003N02TL feature comparison

SI2306BDS-T1-E3 Vishay Intertechnologies

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RUE003N02TL ROHM Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC ROHM CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 17 Weeks, 3 Days
Samacsys Manufacturer Vishay ROHM Semiconductor
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Peak Reflow Temperature (Cel) 260 260
Qualification Status Not Qualified Not Qualified
Terminal Finish MATTE TIN Matte Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 30 10
Base Number Matches 2 1
Pbfree Code Yes
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.3 A
Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.15 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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