SI2306BDS-T1-E3
vs
2N6659
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Not Recommended
|
Active
|
| Ihs Manufacturer |
VISHAY SILICONIX
|
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
| Part Package Code |
SOT-23
|
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
TO-39, 3 PIN
|
| Pin Count |
3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Vishay
|
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Qualification Status |
Not Qualified
|
|
| Terminal Finish |
MATTE TIN
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Base Number Matches |
2
|
20
|
| Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
|
35 V
|
| Drain Current-Max (ID) |
|
2 A
|
| Drain-source On Resistance-Max |
|
1.8 Ω
|
| FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
|
10 pF
|
| JEDEC-95 Code |
|
TO-205AD
|
| JESD-30 Code |
|
O-MBCY-W3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
CYLINDRICAL
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
|
6.25 W
|
| Pulsed Drain Current-Max (IDM) |
|
3 A
|
| Surface Mount |
|
NO
|
| Terminal Form |
|
WIRE
|
| Terminal Position |
|
BOTTOM
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
| Turn-off Time-Max (toff) |
|
5 ns
|
| Turn-on Time-Max (ton) |
|
5 ns
|
|
|
|
Compare SI2306BDS-T1-E3 with alternatives