SI2301BDS-T1
vs
LT2301
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
LITE-ON SEMICONDUCTOR CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Vishay
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
2.2 A
2 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
0.9 W
Surface Mount
YES
YES
Base Number Matches
2
1
Package Description
SMALL OUTLINE, R-PDSO-G3
Pin Count
3
Additional Feature
ULTRA-LOW RESISTANCE
DS Breakdown Voltage-Min
20 V
Drain-source On Resistance-Max
0.11 Ω
JESD-30 Code
R-PDSO-G3
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Qualification Status
Not Qualified
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare LT2301 with alternatives