SGB20N60
vs
HGT1S5N120BNS9A
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
SIEMENS A G
FAIRCHILD SEMICONDUCTOR CORP
Package Description
SMALL OUTLINE, R-PSSO-G2
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Additional Feature
LOW CONDUCTION LOSS, FAST
LOW CONDUCTION LOSS, AVALANCHE RATED
Case Connection
COLLECTOR
COLLECTOR
Collector Current-Max (IC)
40 A
21 A
Collector-Emitter Voltage-Max
600 V
1200 V
Configuration
SINGLE
SINGLE
JEDEC-95 Code
TO-263AB
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
MOTOR CONTROL
MOTOR CONTROL
Transistor Element Material
SILICON
SILICON
Turn-off Time-Nom (toff)
313 ns
357 ns
Turn-on Time-Nom (ton)
57 ns
35 ns
Base Number Matches
2
2
Rohs Code
Fall Time-Max (tf)
200 ns
Gate-Emitter Voltage-Max
20 V
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
167 W
Rise Time-Max (tr)
20 ns
Terminal Finish
TIN LEAD
Compare SGB20N60 with alternatives
Compare HGT1S5N120BNS9A with alternatives