SGB10N60A
vs
GT50J121
feature comparison
| Pbfree Code |
Yes
|
No
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Obsolete
|
End Of Life
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
TOSHIBA CORP
|
| Part Package Code |
D2PAK
|
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
FLANGE MOUNT, R-PSFM-T3
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
4 Weeks
|
|
| Samacsys Manufacturer |
Infineon
|
|
| Additional Feature |
LOW CONDUCTION LOSS
|
HIGH SPEED
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
20 A
|
50 A
|
| Collector-Emitter Voltage-Max |
600 V
|
600 V
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| Fall Time-Max (tf) |
32 ns
|
|
| Gate-Emitter Thr Voltage-Max |
5 V
|
|
| Gate-Emitter Voltage-Max |
20 V
|
20 V
|
| JEDEC-95 Code |
TO-263AB
|
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSFM-T3
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
245
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
92 W
|
240 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rise Time-Max (tr) |
15 ns
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
POWER CONTROL
|
POWER CONTROL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
224 ns
|
430 ns
|
| Turn-on Time-Nom (ton) |
40 ns
|
240 ns
|
| Base Number Matches |
3
|
1
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare SGB10N60A with alternatives
Compare GT50J121 with alternatives