SGB10N60
vs
HGTG20N60C3DR
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
SIEMENS A G
|
INTERSIL CORP
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
FLANGE MOUNT, R-PSFM-T3
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOW CONDUCTION LOSS, FAST
|
LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
21 A
|
40 A
|
| Collector-Emitter Voltage-Max |
600 V
|
600 V
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| JEDEC-95 Code |
TO-263AB
|
TO-247
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
MOTOR CONTROL
|
MOTOR CONTROL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
329 ns
|
720 ns
|
| Turn-on Time-Nom (ton) |
46 ns
|
74 ns
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
No
|
| Fall Time-Max (tf) |
|
400 ns
|
| Gate-Emitter Thr Voltage-Max |
|
7.5 V
|
| Gate-Emitter Voltage-Max |
|
20 V
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
164 W
|
| Rise Time-Max (tr) |
|
40 ns
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|
Compare SGB10N60 with alternatives
Compare HGTG20N60C3DR with alternatives