SGB07N120
vs
1MB10-120
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
COLLMER SEMICONDUCTOR INC
Part Package Code
D2PAK
TO-3P
Package Description
SMALL OUTLINE, R-PSSO-G2
IN-LINE, R-PSIP-T3
Pin Count
3
2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Case Connection
COLLECTOR
Collector Current-Max (IC)
16.5 A
16 A
Collector-Emitter Voltage-Max
1200 V
1200 V
Configuration
SINGLE
SINGLE
Fall Time-Max (tf)
61 ns
Gate-Emitter Thr Voltage-Max
5 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSIP-T3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
IN-LINE
Peak Reflow Temperature (Cel)
245
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
125 W
Qualification Status
Not Qualified
Not Qualified
Rise Time-Max (tr)
24 ns
Surface Mount
YES
NO
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
SILICON
Turn-off Time-Nom (toff)
520 ns
1500 ns
Turn-on Time-Nom (ton)
56 ns
1200 ns
Base Number Matches
3
1
Compare SGB07N120 with alternatives
Compare 1MB10-120 with alternatives