SGB07N120 vs 1MB10-120 feature comparison

SGB07N120 Infineon Technologies AG

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1MB10-120 Fuji Electric Co Ltd

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG COLLMER SEMICONDUCTOR INC
Part Package Code D2PAK TO-3P
Package Description SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Pin Count 3 2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 16.5 A 16 A
Collector-Emitter Voltage-Max 1200 V 1200 V
Configuration SINGLE SINGLE
Fall Time-Max (tf) 61 ns
Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 R-PSIP-T3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Qualification Status Not Qualified Not Qualified
Rise Time-Max (tr) 24 ns
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 520 ns 1500 ns
Turn-on Time-Nom (ton) 56 ns 1200 ns
Base Number Matches 3 1

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