SFF430M
vs
IRF830AJ69Z
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
SOLID STATE DEVICES INC
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
TO-254
TO-220AB
Package Description
FLANGE MOUNT, S-MSFM-P3
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
4.5 A
4.5 A
Drain-source On Resistance-Max
1.5 Ω
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-254AA
TO-220AB
JESD-30 Code
S-MSFM-P3
R-PSFM-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
PLASTIC/EPOXY
Package Shape
SQUARE
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
63 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
PIN/PEG
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
4
1
Avalanche Energy Rating (Eas)
338 mJ
Pulsed Drain Current-Max (IDM)
18 A
Compare SFF430M with alternatives
Compare IRF830AJ69Z with alternatives