SFAF802GR vs UF8A10-H feature comparison

SFAF802GR Taiwan Semiconductor

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UF8A10-H Formosa Microsemi Co Ltd

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Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD FORMOSA MICROSEMI CO LTD
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Application GENERAL PURPOSE EFFICIENCY
Configuration SINGLE SINGLE
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 0.975 V 1 V
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 125 A 125 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 8 A 8 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Recovery Time-Max 0.035 µs 0.05 µs
Surface Mount NO NO
Base Number Matches 1 1
HTS Code 8541.10.00.80
Additional Feature LOW POWER LOSS
Diode Element Material SILICON
JEDEC-95 Code TO-220AC
JESD-30 Code R-PSFM-T2
Number of Terminals 2
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Reverse Current-Max 5 µA
Terminal Form THROUGH-HOLE
Terminal Position SINGLE

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