SF54G-H
vs
MBR5H200SS_R2_00001
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
FORMOSA MICROSEMI CO LTD
PAN JIT INTERNATIONAL INC
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Additional Feature
HIGH RELIABILITY
LOW POWER LOSS
Application
EFFICIENCY
EFFICIENCY
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
0.95 V
0.9 V
JEDEC-95 Code
DO-201AD
DO-201AD
JESD-30 Code
O-PALF-W2
O-PALF-W2
Non-rep Pk Forward Current-Max
150 A
150 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
175 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
5 A
5 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Rep Pk Reverse Voltage-Max
200 V
200 V
Reverse Current-Max
5 µA
0.5 µA
Reverse Recovery Time-Max
0.035 µs
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Technology
SCHOTTKY
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare SF54G-H with alternatives
Compare MBR5H200SS_R2_00001 with alternatives