SDR1GSMTXV
vs
SJ5622
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
SOLID STATE DEVICES INC
|
SENSITRON SEMICONDUCTOR
|
| Package Description |
O-LELF-R2
|
E-LALF-W2
|
| Pin Count |
2
|
2
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Additional Feature |
METALLURGICALLY BONDED
|
HIGH RELIABILITY, METALLURGICALLY BONDED
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
O-LELF-R2
|
E-LALF-W2
|
| Non-rep Pk Forward Current-Max |
25 A
|
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ELLIPTICAL
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
400 V
|
1000 V
|
| Reverse Recovery Time-Max |
0.06 µs
|
2 µs
|
| Surface Mount |
YES
|
NO
|
| Technology |
SCHOTTKY
|
|
| Terminal Form |
WRAP AROUND
|
WIRE
|
| Terminal Position |
END
|
AXIAL
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Reference Standard |
|
MIL-19500
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare SDR1GSMTXV with alternatives
Compare SJ5622 with alternatives