SD5200N
vs
SD5000N
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
TELEDYNE COMPONENTS
|
CALOGIC LLC
|
| Package Description |
IN-LINE, R-PDIP-T16
|
PLASTIC, DIP-16
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
COMMON SUBSTRATE, 4 ELEMENTS WITH BUILT-IN DIODE
|
COMMON GATE, 4 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
30 V
|
20 V
|
| Drain Current-Max (ID) |
0.05 A
|
0.05 A
|
| Drain-source On Resistance-Max |
80 Ω
|
70 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
0.5 pF
|
0.5 pF
|
| JESD-30 Code |
R-PDIP-T16
|
R-PDIP-T16
|
| Number of Elements |
4
|
4
|
| Number of Terminals |
16
|
16
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
2
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| Part Package Code |
|
DIP
|
| Pin Count |
|
16
|
| HTS Code |
|
8541.21.00.95
|
| Additional Feature |
|
LOW INSERTION LOSS
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation-Max (Abs) |
|
0.5 W
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare SD5200N with alternatives
Compare SD5000N with alternatives