SD1015E3
vs
BLW34
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
ASI SEMICONDUCTOR INC
|
| Package Description |
POST/STUD MOUNT, O-PRPM-F4
|
POST/STUD MOUNT, O-CRPM-F4
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
1 A
|
3.5 A
|
| Collector-Base Capacitance-Max |
250 pF
|
|
| Collector-Emitter Voltage-Max |
35 V
|
30 V
|
| Configuration |
SINGLE WITH BUILT-IN RESISTOR
|
SINGLE
|
| Highest Frequency Band |
VERY HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
| JESD-30 Code |
O-PRPM-F4
|
O-CRPM-F4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
POST/STUD MOUNT
|
POST/STUD MOUNT
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
RADIAL
|
RADIAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
108 MHz
|
|
| Base Number Matches |
1
|
7
|
| DC Current Gain-Min (hFE) |
|
20
|
| Operating Temperature-Max |
|
200 °C
|
| Power Dissipation-Max (Abs) |
|
31 W
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare SD1015E3 with alternatives
Compare BLW34 with alternatives