Findchips: Compare SCE33S512320AF-6EBX vs SCE33S512320AE-75BX

SCE33S512320AF-6EBX vs SCE33S512320AE-75BX feature comparison

Buy Now Datasheet

Buy Now Datasheet

Part Life Cycle Code	Contact Manufacturer	Contact Manufacturer
Ihs Manufacturer	XIAN UNILC SEMICONDUCTORS CO LTD	XIAN UNILC SEMICONDUCTORS CO LTD
Package Description	TFBGA,	TSOP2,
Reach Compliance Code	unknown	unknown
ECCN Code	EAR99	EAR99
HTS Code	8542.32.00.28	8542.32.00.28
Access Mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Access Time-Max	5.4 ns	5.4 ns
Additional Feature	AUTO REFRESH	AUTO REFRESH
JESD-30 Code	R-PBGA-B90	R-PDSO-G86
Length	13 mm	22.22 mm
Memory Density	536870912 bit	536870912 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
Memory Width	32	32
Number of Functions	1	1
Number of Ports	1	1
Number of Terminals	90	86
Number of Words	16777216 words	16777216 words
Number of Words Code	16000000	16000000
Operating Mode	SYNCHRONOUS	SYNCHRONOUS
Operating Temperature-Max	125 °C	125 °C
Operating Temperature-Min	-55 °C	-55 °C
Organization	16MX32	16MX32
Package Body Material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package Code	TFBGA	TSOP2
Package Shape	RECTANGULAR	RECTANGULAR
Package Style	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE
Seated Height-Max	1.2 mm	1.2 mm
Supply Voltage-Max (Vsup)	3.6 V	3.6 V
Supply Voltage-Min (Vsup)	3 V	3 V
Supply Voltage-Nom (Vsup)	3.3 V	3.3 V
Surface Mount	YES	YES
Technology	CMOS	CMOS
Temperature Grade	MILITARY	MILITARY
Terminal Form	BALL	GULL WING
Terminal Pitch	0.8 mm	0.5 mm
Terminal Position	BOTTOM	DUAL
Width	8 mm	10.16 mm
Base Number Matches	1	1
	Memory » DRAMs	Memory » DRAMs