We use Cookies to give you best experience on our website. By using our website and services, you expressly agree to the placement of our performance, functionality and advertising cookies. Please see our Privacy Policy for more information.

Register or Sign In

SB3505GW vs SB3505/W feature comparison

SB3505GW Taiwan Semiconductor

Buy Now Datasheet

SB3505/W RFE International Inc

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD RFE INTERNATIONAL INC
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 50 V
Case Connection ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 400 A 400 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 35 A 35 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount NO NO
Base Number Matches 1 1
Diode Element Material SILICON
Diodes » Bridge Rectifier Diodes
Diodes » Bridge Rectifier Diodes

Compare SB3505GW with alternatives

Compare SB3505/W with alternatives