SB151M vs BR1501(W) feature comparison

SB151M Taiwan Semiconductor

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BR1501(W) Galaxy Microelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 100 V 100 V
Case Connection ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 300 A 300 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 15 A 15 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 100 V 100 V
Surface Mount NO NO
Base Number Matches 2 2

Compare SB151M with alternatives

Compare BR1501(W) with alternatives