SB120-G vs 1N5817E3 feature comparison

SB120-G Sangdest Microelectronics (Nanjing) Co Ltd

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1N5817E3 Microchip Technology Inc

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Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD MICROCHIP TECHNOLOGY INC
Package Description PLASTIC PACKAGE-2 PLASTIC PACKAGE-2
Reach Compliance Code unknown compliant
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS HIGH RELIABILITY
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code DO-41 DO-41
JESD-30 Code O-PALF-W2 O-PALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Output Current-Max 1 A 1 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 20 V 20 V
Surface Mount NO NO
Technology SCHOTTKY SCHOTTKY
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 1
Factory Lead Time 24 Weeks
Samacsys Manufacturer Microchip
Number of Phases 1

Compare SB120-G with alternatives

Compare 1N5817E3 with alternatives