SA48C-GT3 vs P6KE56CP feature comparison

SA48C-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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P6KE56CP STMicroelectronics

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD STMICROELECTRONICS
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown compliant
Breakdown Voltage-Max 65.1 V 61.6 V
Breakdown Voltage-Min 53.3 V 53.2 V
Breakdown Voltage-Nom 59.2 V 56 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 85.5 V 100 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 500 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 48 V 48 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Diode Capacitance-Min 350 pF
Reverse Current-Max 5 µA

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