SA150C vs SMAJ58E3TR feature comparison

SA150C EIC Semiconductor Inc

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SMAJ58E3TR Microsemi Corporation

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer EIC SEMICONDUCTOR CO LTD MICROSEMI CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 204 V
Breakdown Voltage-Min 167 V 64.4 V
Breakdown Voltage-Nom 185.5 V
Case Connection ISOLATED
Clamping Voltage-Max 268 V 103 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-41 DO-214AC
JESD-30 Code O-PALF-W2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 1.56 W
Rep Pk Reverse Voltage-Max 150 V 58 V
Reverse Current-Max 1 µA
Reverse Test Voltage 150 V
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Form WIRE C BEND
Terminal Position AXIAL DUAL
Base Number Matches 48 1
Part Package Code DO-214AC
Package Description R-PDSO-C2
Pin Count 2
Additional Feature TR, 7 INCH: 750
JESD-609 Code e3
Moisture Sensitivity Level 1
Qualification Status Not Qualified
Terminal Finish MATTE TIN

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