SA110C-GT3 vs P6KE130-13 feature comparison

SA110C-GT3 Sangdest Microelectronics (Nanjing) Co Ltd

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P6KE130-13 Diodes Incorporated

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD DIODES INC
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
Breakdown Voltage-Max 149 V 143 V
Breakdown Voltage-Min 122 V 117 V
Breakdown Voltage-Nom 135.5 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 196 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-15 DO-15
JESD-30 Code O-PALF-W2 O-PALF-W2
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 500 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W 5 W
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 110 V 105 V
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 1
ECCN Code EAR99
HTS Code 8541.10.00.50

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