SA110A vs P6KE130A-G feature comparison

SA110A International Semiconductor Inc

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P6KE130A-G Sangdest Microelectronics (Nanjing) Co Ltd

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERNATIONAL SEMICONDUCTOR INC SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 135 V 137 V
Breakdown Voltage-Min 122 V 124 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 177 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 O-PALF-W2
Non-rep Peak Rev Power Dis-Max 500 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 5 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 110 V 111 V
Reverse Current-Max 1 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 2
Rohs Code Yes
JEDEC-95 Code DO-15
Moisture Sensitivity Level 1
Reference Standard UL RECOGNIZED

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