SA10-GT3
vs
SA10-E3/54
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
VISHAY SEMICONDUCTORS
Package Description
O-PALF-W2
O-PALF-W2
Reach Compliance Code
unknown
unknown
Breakdown Voltage-Max
13.6 V
13.6 V
Breakdown Voltage-Min
11.1 V
11.1 V
Breakdown Voltage-Nom
12.35 V
12.35 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
18.8 V
18.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-15
DO-204AC
JESD-30 Code
O-PALF-W2
O-PALF-W2
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3 W
3 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
10 V
10 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Part Package Code
DO-15
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
EXCELLENT CLAMPING CAPABILITY
JESD-609 Code
e3
Terminal Finish
MATTE TIN
Compare SA10-GT3 with alternatives
Compare SA10-E3/54 with alternatives