S9014W-L vs NSVBC847BTT1G feature comparison

S9014W-L Galaxy Microelectronics

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NSVBC847BTT1G onsemi

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Part Life Cycle Code Active Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD ONSEMI
Package Description SMALL OUTLINE, R-PDSO-G3 SC-75, SOT-416, 3 PIN
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 45 V 45 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 200 200
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 150 MHz 100 MHz
Base Number Matches 2 1
Pbfree Code Yes
Manufacturer Package Code 463-01
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Collector-Base Capacitance-Max 4.5 pF
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 0.3 W
Reference Standard AEC-Q101
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30
VCEsat-Max 0.6 V

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