S82S11F
vs
93L425DMQB
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SIGNETICS CORP
NATIONAL SEMICONDUCTOR CORP
Package Description
,
DIP, DIP16,.3
Reach Compliance Code
unknown
unknown
ECCN Code
3A001.A.2.C
3A001.A.2.C
HTS Code
8542.32.00.41
8542.32.00.41
Access Time-Max
70 ns
70 ns
JESD-30 Code
R-GDIP-T16
R-XDIP-T16
Memory Density
1024 bit
1024 bit
Memory IC Type
STANDARD SRAM
STANDARD SRAM
Memory Width
1
1
Number of Functions
1
Number of Ports
1
Number of Terminals
16
16
Number of Words
1024 words
1024 words
Number of Words Code
1000
1000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Organization
1KX1
1KX1
Output Characteristics
3-STATE
3-STATE
Output Enable
NO
Package Body Material
CERAMIC, GLASS-SEALED
CERAMIC
Package Code
DIP
DIP
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Supply Voltage-Max (Vsup)
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
NO
Technology
TTL
TTL
Temperature Grade
MILITARY
MILITARY
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
DUAL
DUAL
Base Number Matches
3
3
Rohs Code
JESD-609 Code
e0
Package Equivalence Code
DIP16,.3
Screening Level
38535Q/M;38534H;883B
Supply Current-Max
0.075 mA
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Pitch
2.54 mm
Compare S82S11F with alternatives
Compare 93L425DMQB with alternatives