S71GL032NA0BHW0U2
vs
S71GL032N40BFW0K3
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
CYPRESS SEMICONDUCTOR CORP
|
CYPRESS SEMICONDUCTOR CORP
|
| Package Description |
7 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, HALOGEN FREE, FBGA-56
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8542.32.00.71
|
|
| Access Time-Max |
90 ns
|
|
| Additional Feature |
PSRAM IS ORGANIZED AS 1M X 16
|
|
| JESD-30 Code |
R-PBGA-B56
|
|
| JESD-609 Code |
e1
|
|
| Length |
9 mm
|
|
| Memory Density |
33554432 bit
|
|
| Memory IC Type |
MEMORY CIRCUIT
|
|
| Memory Width |
16
|
|
| Mixed Memory Type |
FLASH+SRAM
|
|
| Moisture Sensitivity Level |
3
|
|
| Number of Functions |
1
|
|
| Number of Terminals |
56
|
|
| Number of Words |
2097152 words
|
|
| Number of Words Code |
2000000
|
|
| Operating Mode |
ASYNCHRONOUS
|
|
| Operating Temperature-Max |
85 °C
|
|
| Operating Temperature-Min |
-25 °C
|
|
| Organization |
2MX16
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Code |
TFBGA
|
|
| Package Equivalence Code |
BGA56,8X8,32
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Qualification Status |
Not Qualified
|
|
| Seated Height-Max |
1.2 mm
|
|
| Supply Voltage-Max (Vsup) |
3.1 V
|
|
| Supply Voltage-Min (Vsup) |
2.7 V
|
|
| Supply Voltage-Nom (Vsup) |
3 V
|
|
| Surface Mount |
YES
|
|
| Technology |
CMOS
|
|
| Temperature Grade |
OTHER
|
|
| Terminal Finish |
TIN SILVER COPPER
|
|
| Terminal Form |
BALL
|
|
| Terminal Pitch |
0.8 mm
|
|
| Terminal Position |
BOTTOM
|
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
|
| Width |
7 mm
|
|
| Base Number Matches |
2
|
2
|
|
|
|
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