S3J-TR7G vs ES3JB feature comparison

S3J-TR7G Taiwan Semiconductor

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ES3JB Galaxy Microelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description SMC, 2 PIN
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80
Date Of Intro 2018-06-04
Application GENERAL PURPOSE SUPER FAST RECOVERY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.15 V 1.7 V
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2 R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 100 A 100 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 3 A 3 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Rep Pk Reverse Voltage-Max 600 V 600 V
Reverse Current-Max 10 µA 10 µA
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 1 13
Part Package Code SMB
Breakdown Voltage-Min 600 V
Reference Standard MIL-STD-202
Reverse Recovery Time-Max 0.035 µs
Reverse Test Voltage 600 V

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