S3GB vs ES3GHV7G feature comparison

S3GB Galaxy Microelectronics

Buy Now Datasheet

ES3GHV7G Taiwan Semiconductor

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Application GENERAL PURPOSE EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.15 V 1.3 V
Non-rep Pk Forward Current-Max 100 A 100 A
Number of Elements 1 1
Number of Phases 1 1
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 3 A 3 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 400 V 400 V
Surface Mount YES YES
Base Number Matches 17 1
Package Description SMC, 2 PIN
HTS Code 8541.10.00.80
Additional Feature FREE WHEELING DIODE
JEDEC-95 Code DO-214AB
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Terminals 2
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Reference Standard AEC-Q101
Reverse Current-Max 10 µA
Reverse Recovery Time-Max 0.035 µs
Reverse Test Voltage 400 V
Terminal Finish MATTE TIN
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30

Compare S3GB with alternatives

Compare ES3GHV7G with alternatives