S29GL512S11DHIV13 vs S29GL512S11DHIV23 feature comparison

S29GL512S11DHIV13 Infineon Technologies AG

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S29GL512S11DHIV23 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant compliant
Factory Lead Time 8 Weeks 8 Weeks
Access Time-Max 110 ns 110 ns
Command User Interface YES YES
Common Flash Interface YES YES
Data Polling YES YES
Data Retention Time-Min 20 20
Endurance 100000 Write/Erase Cycles 100000 Write/Erase Cycles
JESD-30 Code S-PBGA-B64 S-PBGA-B64
JESD-609 Code e1 e1
Length 9 mm 9 mm
Memory Density 536870912 bit 536870912 bit
Memory IC Type FLASH FLASH
Memory Width 16 16
Moisture Sensitivity Level 3 3
Number of Functions 1 1
Number of Sectors/Size 512 512
Number of Terminals 64 64
Number of Words 33554432 words 33554432 words
Number of Words Code 32000000 32000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 32MX16 32MX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LBGA LBGA
Package Equivalence Code BGA64,8X8,40 BGA64,8X8,40
Package Shape SQUARE SQUARE
Package Style GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
Page Size 16 words 16 words
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) 260 260
Programming Voltage 3 V 3 V
Ready/Busy YES YES
Seated Height-Max 1.4 mm 1.4 mm
Sector Size 64K 64K
Standby Current-Max 0.0001 A 0.0001 A
Supply Current-Max 0.1 mA 0.1 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 2.7 V 2.7 V
Supply Voltage-Nom (Vsup) 3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 30 30
Toggle Bit YES YES
Type NOR TYPE NOR TYPE
Width 9 mm 9 mm
Base Number Matches 1 1
Samacsys Manufacturer Infineon

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