S29GL512S10FAI023
vs
S29GL512S11DHI013
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
SPANSION INC
CYPRESS SEMICONDUCTOR CORP
Reach Compliance Code
unknown
compliant
ECCN Code
3A991.B.1.A
EAR99
HTS Code
8542.32.00.51
8542.32.00.51
Memory IC Type
FLASH
FLASH
Programming Voltage
3 V
2.7 V
Base Number Matches
3
2
Rohs Code
Package Description
9 X 9 MM, HALOGEN FREE AND LEAD FREE, FBGA-64
Access Time-Max
110 ns
Boot Block
BOTTOM/TOP
Command User Interface
YES
Common Flash Interface
YES
Data Polling
YES
JESD-30 Code
S-PBGA-B64
JESD-609 Code
e1
Length
9 mm
Memory Density
536870912 bit
Memory Width
8
Moisture Sensitivity Level
3
Number of Functions
1
Number of Sectors/Size
512
Number of Terminals
64
Number of Words
67108864 words
Number of Words Code
64000000
Operating Mode
ASYNCHRONOUS
Operating Temperature-Max
85 °C
Operating Temperature-Min
-40 °C
Organization
64MX8
Package Body Material
PLASTIC/EPOXY
Package Code
LBGA
Package Equivalence Code
BGA64,8X8,40
Package Shape
SQUARE
Package Style
GRID ARRAY, LOW PROFILE
Page Size
16 words
Parallel/Serial
PARALLEL
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Ready/Busy
YES
Seated Height-Max
1.4 mm
Sector Size
64K
Standby Current-Max
0.0001 A
Supply Current-Max
0.08 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
2.7 V
Supply Voltage-Nom (Vsup)
3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Finish
TIN SILVER COPPER
Terminal Form
BALL
Terminal Pitch
1 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
30
Toggle Bit
YES
Type
NOR TYPE
Width
9 mm
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