S29GL512P12FAI012
vs
S29GL512P12FAI022
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
CYPRESS SEMICONDUCTOR CORP
|
CYPRESS SEMICONDUCTOR CORP
|
Package Description |
LBGA,
|
LBGA,
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8542.32.00.51
|
8542.32.00.51
|
Access Time-Max |
120 ns
|
120 ns
|
JESD-30 Code |
R-PBGA-B64
|
R-PBGA-B64
|
JESD-609 Code |
e0
|
e0
|
Length |
13 mm
|
13 mm
|
Memory Density |
536870912 bit
|
536870912 bit
|
Memory IC Type |
FLASH
|
FLASH
|
Memory Width |
1
|
1
|
Moisture Sensitivity Level |
3
|
3
|
Number of Functions |
1
|
1
|
Number of Terminals |
64
|
64
|
Number of Words |
536870912 words
|
536870912 words
|
Number of Words Code |
512000000
|
512000000
|
Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
Operating Temperature-Max |
85 °C
|
85 °C
|
Operating Temperature-Min |
-40 °C
|
-40 °C
|
Organization |
512MX1
|
512MX1
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
LBGA
|
LBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, LOW PROFILE
|
GRID ARRAY, LOW PROFILE
|
Parallel/Serial |
PARALLEL
|
PARALLEL
|
Programming Voltage |
3 V
|
3 V
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Seated Height-Max |
1.4 mm
|
1.4 mm
|
Supply Current-Max |
0.11 mA
|
0.11 mA
|
Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
Supply Voltage-Min (Vsup) |
2.7 V
|
2.7 V
|
Supply Voltage-Nom (Vsup) |
3 V
|
3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
1 mm
|
1 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Type |
NOR TYPE
|
NOR TYPE
|
Width |
11 mm
|
11 mm
|
Base Number Matches |
2
|
2
|
|
|
|
Compare S29GL512P12FAI012 with alternatives
Compare S29GL512P12FAI022 with alternatives