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S29GL128S10FHI020 vs S29GL128S10DHIV13 feature comparison

S29GL128S10FHI020 Cypress Semiconductor

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S29GL128S10DHIV13 Infineon Technologies AG

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer CYPRESS SEMICONDUCTOR CORP INFINEON TECHNOLOGIES AG
Package Description FBGA-64
Reach Compliance Code compliant compliant
ECCN Code 3A991.B.1.A
HTS Code 8542.32.00.51
Access Time-Max 100 ns 100 ns
Command User Interface YES YES
Common Flash Interface YES YES
Data Polling YES YES
JESD-30 Code R-PBGA-B64 S-PBGA-B64
JESD-609 Code e1 e1
Length 13 mm 9 mm
Memory Density 134217728 bit 134217728 bit
Memory IC Type EEPROM CARD FLASH
Memory Width 16 16
Moisture Sensitivity Level 3 3
Number of Functions 1 1
Number of Sectors/Size 128 128
Number of Terminals 64 64
Number of Words 8388608 words 8388608 words
Number of Words Code 8000000 8000000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 8MX16 8MX16
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LBGA LBGA
Package Equivalence Code BGA64,8X8,40 BGA64,8X8,40
Package Shape RECTANGULAR SQUARE
Package Style GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
Page Size 16 words 16 words
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) 260 260
Programming Voltage 2.7 V 3 V
Qualification Status Not Qualified
Ready/Busy YES YES
Seated Height-Max 1.4 mm 1.4 mm
Sector Size 64K 64K
Standby Current-Max 0.0001 A 0.0001 A
Supply Current-Max 0.08 mA 0.1 mA
Supply Voltage-Max (Vsup) 3.6 V 3.6 V
Supply Voltage-Min (Vsup) 2.7 V 2.7 V
Supply Voltage-Nom (Vsup) 3 V 3 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 30 30
Toggle Bit YES YES
Type NOR TYPE NOR TYPE
Width 11 mm 9 mm
Write Cycle Time-Max (tWC) 0.00006 ms
Base Number Matches 3 3
Samacsys Manufacturer Infineon
Data Retention Time-Min 20
Endurance 100000 Write/Erase Cycles
Output Characteristics 3-STATE
Memory » EEPROMs
Memory » Flash Memories

Compare S29GL128S10FHI020 with alternatives

Compare S29GL128S10DHIV13 with alternatives