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S29CD016J0PFAM11 vs S29CD016J0PFAI033 feature comparison

S29CD016J0PFAM11 Cypress Semiconductor

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S29CD016J0PFAI033 Cypress Semiconductor

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Rohs Code No No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer CYPRESS SEMICONDUCTOR CORP CYPRESS SEMICONDUCTOR CORP
Package Description LBGA, BGA80,8X10,40 BGA-80
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.51 8542.32.00.51
Access Time-Max 54 ns 54 ns
Additional Feature SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK
Boot Block BOTTOM BOTTOM
Clock Frequency-Max (fCLK) 66 MHz
Command User Interface YES YES
Common Flash Interface YES YES
Data Polling YES YES
JESD-30 Code R-PBGA-B80 R-PBGA-B80
Length 13 mm 13 mm
Memory Density 16777216 bit 16777216 bit
Memory IC Type FLASH FLASH
Memory Width 32 32
Number of Functions 1 1
Number of Sectors/Size 16,30 16,30
Number of Terminals 80 80
Number of Words 524288 words 524288 words
Number of Words Code 512000 512000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 512KX32 512KX32
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code LBGA LBGA
Package Equivalence Code BGA80,8X10,40 BGA80,8X10,40
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL
Programming Voltage 2.7 V 2.7 V
Qualification Status Not Qualified Not Qualified
Ready/Busy YES YES
Seated Height-Max 1.4 mm 1.4 mm
Sector Size 2K,16K 2K,16K
Standby Current-Max 0.00006 A 0.00006 A
Supply Current-Max 0.09 mA 0.09 mA
Supply Voltage-Max (Vsup) 2.75 V 2.75 V
Supply Voltage-Min (Vsup) 2.5 V 2.5 V
Supply Voltage-Nom (Vsup) 2.6 V 2.6 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade AUTOMOTIVE INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 1 mm 1 mm
Terminal Position BOTTOM BOTTOM
Toggle Bit YES YES
Type NOR TYPE NOR TYPE
Width 11 mm 11 mm
Write Cycle Time-Max (tWC) 0.000065 ms
Base Number Matches 2 2
JESD-609 Code e0
Moisture Sensitivity Level 3
Peak Reflow Temperature (Cel) 260
Terminal Finish TIN LEAD
Memory » Flash Memories
Memory » Flash Memories

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