S25FL256LAGBHM030
vs
S25FL256LAGBHI023
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Transferred
|
Ihs Manufacturer |
CYPRESS SEMICONDUCTOR CORP
|
CYPRESS SEMICONDUCTOR CORP
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
3A991.B.1.A
|
3A991.B.1.A
|
HTS Code |
8542.32.00.51
|
8542.32.00.51
|
Date Of Intro |
2016-09-26
|
|
Additional Feature |
IT ALSO HAVE MEMORY WIDTH X 1
|
IT ALSO HAVE MEMORY WIDTH X 1
|
Alternate Memory Width |
2
|
2
|
Clock Frequency-Max (fCLK) |
133 MHz
|
133 MHz
|
JESD-30 Code |
R-PBGA-B24
|
R-PBGA-B24
|
Length |
8 mm
|
8 mm
|
Memory Density |
268435456 bit
|
268435456 bit
|
Memory IC Type |
FLASH
|
FLASH
|
Memory Width |
8
|
8
|
Number of Functions |
1
|
1
|
Number of Terminals |
24
|
24
|
Number of Words |
33554432 words
|
33554432 words
|
Number of Words Code |
32000000
|
32000000
|
Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
Operating Temperature-Max |
125 °C
|
85 °C
|
Operating Temperature-Min |
-40 °C
|
-40 °C
|
Organization |
32MX8
|
32MX8
|
Output Characteristics |
3-STATE
|
3-STATE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Code |
TBGA
|
TBGA
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
GRID ARRAY, THIN PROFILE
|
GRID ARRAY, THIN PROFILE
|
Parallel/Serial |
SERIAL
|
SERIAL
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Programming Voltage |
3 V
|
3 V
|
Screening Level |
AEC-Q100
|
|
Seated Height-Max |
1.2 mm
|
1.2 mm
|
Supply Current-Max |
0.05 mA
|
0.05 mA
|
Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
Supply Voltage-Min (Vsup) |
2.7 V
|
2.7 V
|
Supply Voltage-Nom (Vsup) |
3 V
|
3 V
|
Surface Mount |
YES
|
YES
|
Technology |
CMOS
|
CMOS
|
Temperature Grade |
AUTOMOTIVE
|
INDUSTRIAL
|
Terminal Form |
BALL
|
BALL
|
Terminal Pitch |
1 mm
|
1 mm
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Type |
NOR TYPE
|
NOR TYPE
|
Width |
6 mm
|
6 mm
|
Base Number Matches |
2
|
2
|
|
|
|