S25FL128SAGNFB003
vs
S25FL128SAGNFM003
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
CYPRESS SEMICONDUCTOR CORP
CYPRESS SEMICONDUCTOR CORP
Reach Compliance Code
compliant
compliant
ECCN Code
3A991.B.1.A
3A991.B.1.A
HTS Code
8542.32.00.51
8542.32.00.51
Alternate Memory Width
2
2
Clock Frequency-Max (fCLK)
133 MHz
133 MHz
JESD-30 Code
R-PDSO-N8
R-PDSO-N8
JESD-609 Code
e3
e3
Length
8 mm
8 mm
Memory Density
134217728 bit
134217728 bit
Memory IC Type
FLASH
FLASH
Memory Width
8
8
Number of Functions
1
1
Number of Terminals
8
8
Number of Words
16777216 words
16777216 words
Number of Words Code
16000000
16000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
105 °C
125 °C
Operating Temperature-Min
-40 °C
-40 °C
Organization
16MX8
16MX8
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
HVSON
HVSON
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/Serial
SERIAL
SERIAL
Programming Voltage
3 V
3 V
Screening Level
AEC-Q100
AEC-Q100
Seated Height-Max
0.8 mm
0.8 mm
Supply Current-Max
0.1 mA
0.1 mA
Supply Voltage-Max (Vsup)
3.6 V
3.6 V
Supply Voltage-Min (Vsup)
2.7 V
2.7 V
Supply Voltage-Nom (Vsup)
3 V
3 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
AUTOMOTIVE
Terminal Finish
MATTE TIN
MATTE TIN
Terminal Form
NO LEAD
NO LEAD
Terminal Pitch
1.27 mm
1.27 mm
Terminal Position
DUAL
DUAL
Type
NOR TYPE
NOR TYPE
Width
6 mm
6 mm
Write Cycle Time-Max (tWC)
500 ms
Base Number Matches
1
1
Compare S25FL128SAGNFB003 with alternatives
Compare S25FL128SAGNFM003 with alternatives