S25FL128SAGMFAR00
vs
S25FL128SAGMFB003
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Yes
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
CYPRESS SEMICONDUCTOR CORP
CYPRESS SEMICONDUCTOR CORP
Package Description
SOP,
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
3A991.B.1.A
HTS Code
8542.32.00.51
8542.32.00.51
Additional Feature
ALSO CONFIGURABLE AS 128M X 1
ALSO CONFIGURABLE AS 128M X 1
Alternate Memory Width
2
2
Clock Frequency-Max (fCLK)
133 MHz
133 MHz
JESD-30 Code
R-PDSO-G16
R-PDSO-G16
JESD-609 Code
e3
e3
Length
10.3 mm
10.3 mm
Memory Density
134217728 bit
134217728 bit
Memory IC Type
FLASH
FLASH
Memory Width
8
8
Moisture Sensitivity Level
3
3
Number of Functions
1
1
Number of Terminals
16
16
Number of Words
16777216 words
16777216 words
Number of Words Code
16000000
16000000
Operating Mode
SYNCHRONOUS
SYNCHRONOUS
Operating Temperature-Max
85 °C
105 °C
Operating Temperature-Min
-40 °C
-40 °C
Organization
16MX8
16MX8
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
SOP
SOP
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Parallel/Serial
SERIAL
SERIAL
Peak Reflow Temperature (Cel)
260
260
Programming Voltage
3 V
3 V
Screening Level
AEC-Q100
AEC-Q100
Seated Height-Max
2.65 mm
2.65 mm
Supply Current-Max
0.1 mA
0.1 mA
Supply Voltage-Max (Vsup)
3.6 V
3.6 V
Supply Voltage-Min (Vsup)
2.7 V
2.7 V
Supply Voltage-Nom (Vsup)
3 V
3 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
INDUSTRIAL
Terminal Finish
MATTE TIN
Matte Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Pitch
1.27 mm
1.27 mm
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Type
NOR TYPE
NOR TYPE
Width
7.5 mm
7.5 mm
Write Cycle Time-Max (tWC)
500 ms
500 ms
Base Number Matches
1
2
Compare S25FL128SAGMFAR00 with alternatives
Compare S25FL128SAGMFB003 with alternatives